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MS: Massenspektrometrie

MS 5: Mass Spectrometry: Posters

MS 5.4: Poster

Dienstag, 3. April 2001, 12:30–15:00, AT2

Assessment of nitrogen concentration and distribution in compact nitrogen containing GaAs and in epitaxially grown GaAs_1−xN_x — •B. Wiedemann¹, J. D. Meyer¹, H. Ch. Alt², A. Yu. Egorov³, and H. Riechert³ — ¹Institute for Nuclear Physics, University of Frankfurt, D-60486 Frankfurt am Main, Germany — ²Engineering Physics, FHM - University of Applied Sciences, D-80001 Munich, Germany — ³Infineon Technologies, Corporate Research CPR 7, D-81730 Munich, Germany

Mass spectrometric, optical and nuclear physical measurements have been carried out on compact nitrogen containing GaAs and epitaxially grown GaAs_1−xN_x layers. Implantation of ¹⁴N and ¹⁵N at 3 MeV into GaAs shows that the local vibrational mode observed by low temperature FTIR at 473 cm^{− 1} resp. 458 cm⁻¹ is due to isolated ¹⁴N resp. ¹⁵N atoms. Quantitatively the FTIR method is calibrated against the SSMS method with a calibration factor f_N = [N]/I_α = 7.4·10¹⁵ cm⁻¹ for the major isotope ¹⁴N at 471 cm⁻¹ in compact GaAs. Nuclear channeling experiments by the ¹⁴N(d,α)¹²C reaction confirm that nitrogen is incorporated into GaAs_1−xN_x at the atomic sites of the GaAs host. Discussions of value with M. Jurisch of Freiberger Compound Materials are acknowledged.