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Bonn 2001 – wissenschaftliches Programm

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T: Teilchenphysik

T 602: Halbleiterdetektoren 6

T 602.4: Vortrag

Donnerstag, 29. März 2001, 10:45–11:00, HS IX

Performance of single elements of silicon detectors with integrated field effect transistor (DEPFET) and continuous clear mechanism — •Adrian Niculae1, Martin Holder1, Peter Klein2, and Gerhard Lutz21Universität Gesamthochschule Siegen, Fachbereich 7 - Physik, Emmy-Noether-Campus D 310, Walter-Flex-Straße 3, D-57068 Siegen — 2MPI Halbleiterlabor, Otto-Hahn-Ring 6, D-81739 München

Depleted Field Effect Transistors (DEPFET) with three different types of a continuous clear structure were investigated statically and dynamically in order to obtain a detailed understanding of the clear mechanism. The low noise capability of these devices is discussed in applications with various rate requirements.

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