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Hamburg 2001 – wissenschaftliches Programm

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AM: Magnetismus

AM 3: Magnetowiderstand I

AM 3.7: Vortrag

Montag, 26. März 2001, 16:00–16:15, S 5.2

Combination of antiferromagnetically coupled Co/Cu/Co trilayers and magnetic tunnel junctions — •H. Brückl2, T. Luciński1,2, M. Justus2, A. Huetten2, and G. Reiss21Institute of Molecular Physics, Polish Academy of Sciences, Poznan, Poland — 2Universität Bielefeld, Fakultät für Physik D2, Universitätsstrasse 25, 33615 Bielefeld

The Co/Al2O3/X tunnel junctions, where X denotes an antiferromagnetically coupled Co(d1)/Cu/Co(d2) trilayer structure with different Co layer thicknesses d1 and d2 were examined. The main goal of this study concerns the influence of the presence of the antiferromagnetically coupled trilayers on the switching field of the junctions. We have found that the switching field of the tunnel junctions with Co1/Cu/Co2 trilayers differs diametrically from the elements with single Co upper electrode. For the Co1/Cu/Co2 with d2=1.4 nm, the switching field increases with increasing d1 thickness whereas for elements with d1=1.4 nm and varying d2 a maximum of the switching field is observed for d2=4 nm. By minor loop measurements, we show the interplay of the orange peel coupling and the antiferromagnetic exchange coupling between Co1 and Co2 resulting in the observed behaviour of the switching field versus Co layer thickness in the tunnel element.

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