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DS: Dünne Schichten

DS 31: Postersitzung

DS 31.10: Poster

Tuesday, March 27, 2001, 16:30–17:30, Foyer Saal 4

Epitaxy of silicon with high carbon concentration by MBE — •P. LAVEANT, G. GERTH, P. WERNER, S. SENZ, and U. GÖSELE — Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle

Here, we propose a growth diagram of Si:C layers by Molecular Beam Epitaxy (MBE) to control as much as possible the dislocation density and avoid twinning or SiC precipitation.

Carbon (C) incorporation in Silicon (Si) well above its equilibrium concentration (5x10¹⁷ at melting temperature), is of industrial interest. As an example, high C concentration can reduce or even suppress the so-called transient enhanced diffusion (TED), which may be detrimental for devices such as heterojunction bipolar transistors (HBT) or can lead, if incorporated without defects, to band gap engineering of Si. MBE is one possibility to incorporate C in Si by orders of magnitude above its solubility. We achieved 100 nm thick Si layers with a C concentration in the percent range. It meens layers under high stresses and metastable. RHEED, SIMS, X-ray and TEM investigations have been performed to analyze the properties and quality of Si:C layers as a function of the growth temperature.