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DS: Dünne Schichten
DS 31: Postersitzung
DS 31.12: Poster
Dienstag, 27. März 2001, 16:30–17:30, Foyer Saal 4
Track formation in KTP by MeV implantation of light ions — •F. Schrempel1, W. Wesch1, Th. Opfermann1, and Th. Höche2 — 1Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena — 2Friedrich-Schiller-Universität Jena, Institut für Glaschemie, Fraunhoferstrasse 6, 07743 Jena
In various insulators damaging and amorphous track formation due to
electronic energy deposition has been observed after swift heavy ion
irradiation. In KTP we have recently observed the formation of amorphous
tracks after 150 MeV Kr-irradiation. In the present paper the damaging of
KTP due to light ion irradiation with energies in the MeV region is
studied. In the case of 4 MeV N- and 3 MeV B-implantation in the near
surface region, i.e. in the region of dominating electronic energy
deposition, by means of RBS a dose-dependent damage production up to the
formation of an amorphous layer at ion fluences of 3x1013 cm−2
and 1x1014 cm−2, respectively, was found. Contrary to that,
Li-implantation does not result in a remarkable damage formation near the
surface up to ion fluences in the order of 1015 cm−2.
By means
of XTEM in the damaged layers below the amorphization threshold amorphous
tracks were observed in the case of N-implantation. The diameter of the
tracks at the surface is about 4 nm and diminishes with increasing depth.
The track density increases with the ion fluence until an amorphous layer
is formed. The electronic energy deposition per ion for N-implantation at
the surface is about 2 keV/nm which is obviously higher than the treshold
value for the detection of amorphous tracks.