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DS: Dünne Schichten

DS 31: Postersitzung

DS 31.42: Poster

Dienstag, 27. März 2001, 16:30–17:30, Foyer Saal 4

TEM Investigations of HMS Layers Grown on Si(001) by Different MBE Techniques — •Anna Mogilatenko, M. Falke, S. Teichert, H. Hortenbach, and H.-J. Hinneberg — Institut für Physik, TU Chemnitz, 09107 Chemnitz

Semiconducting higher manganese silicides (HMS) with a composition near to MnSi_1.7 are of a special interest due to their thermoelectric properties. The morphology and structure of HMS layers grown on Si(001) by MBE using different techniques of deposition have been investigated by TEM. It was shown that a preparation by the template method results in the growth of HMS layers with an epitaxial relationship of its crystallites to Si(001) substrate. In order to influence the growth conditions Sb as a surfactant was applied. This was found to lead to formation of rod like silicide islands with a length of ca. 200 nm and preferential orientation relations to the Si substrate.