Parts | Days | Selection | Search | Downloads | Help

DS: Dünne Schichten

DS 31: Postersitzung

DS 31.44: Poster

Tuesday, March 27, 2001, 16:30–17:30, Foyer Saal 4

Evaporated and sputtered Beta-FeSi2+x thin films: Thermoelectric properties and structure — •H. Grießmann, J. Schumann, A. Heinrich, D. Elefant, and J. Thomas — Institute of Solid State and Materials Research Dresden, Helmholtzstr. 20, D-01069 Dresden, Germany

The resisitivity and the thermoelectric power of n- and p-type Beta-FeSi2+x thin films deposited by electron beam evaporation and magnetron sputtering have been investigated on dependence on Fe/Si-ratio and doping level. Phase content and crystalline state are analyzed by X-ray diffraction and TEM. The activation energy of the dopant element Co and the band gap width were extracted from the resisitivity data in the temperature range of extrinsic and intrinsic conduction, respectively. The values found for the n-type films in a completely crystallized state are in good conformity with the single crystal data. Maximum values of the thermoelectric power factor were achieved in Si-rich films with the composition x=0.15+/-0.05. Defined heat treatment has proved to be a possibility for the optimization of thermoelectric behavior. First silicide based thermopile structures were prepared and tested.