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HL: Halbleiterphysik

HL 10: Grenz- und Oberfl
ächen

HL 10.3: Talk

Monday, March 26, 2001, 16:00–16:15, S16

Atomic Structure of HfO₂(110)/Si(001) Interfaces — •Jarek Dabrowski, Victor Zavodinsky, Hans-Joachim Müssig, and Konstantin Ignatovich — IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany

Due to its high dielectric constant, ability to grow epitaxially on Si(001) substrates, and compatibility with CMOS technology, hafnium oxide is a prospective candidate to substitute SiO₂ in decanano MOSFET transistors. We present first data on the atomic structure of HfO₂/Si(001) and on its relation to the electronic structure of the interface. From ab initio pseudopotential calculations we find that the large chemical difference between bonds in silicon and in the oxide results in the appearance of interface states in vicinty of silicon band edges. This indicates that transition metal oxide dielectric films deposited on silicon substrates may be vulnerable to instabilities caused by charge trapping at the interface states.