Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 10: Grenz- und Oberfl
ächen
HL 10.4: Talk
Monday, March 26, 2001, 16:15–16:30, S16
Segregation of Phosphorus to SiO2/Si(001) Interfaces — •Jarek Dabrowski, Victor Zavodinsky, Hans-Joachim Müssig, and Konstantin Ignatovich — IHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany
Dopant atoms segregate to SiO2/Si(001) interfaces. This affects the distribution of dopants and is a potential problem in manufacture of submicron microelectronic devices. Using phosphorus as a typical example of a donor and guided by results of ab initio calculations, we present a complete model of donor segregation. The model extends our original model [1] to the case of P concentrations in the itermediate regime (around 1013/cm2), that is, to the case of the most importance in technological applications. We show that in this concentration regime, the segregation occurs to sites related with interface roughness and is mediated by diffusion and self-annihilation of Si dangling bonds. It follows that hardening the interface against diffusion of dangling bonds (for example, by nitridation) should reduce the P-trapping efficiency of SiO2/Si(001) boundaries.
[1] J. Dabrowski, H.-J. Müssig, R. Baierle, M. J. Caldas, V. Zavodinsky, J. Vac. Sci. Technol. A (2000).