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HL: Halbleiterphysik

HL 24: Poster II

HL 24.4: Poster

Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3

Infrared and Raman Spectroscopic Studies on Diamond Thin Films. — •M. Roy¹, A.K. Dua¹, V.C. George¹, M. Friedrich², and D.R.T. Zahn² — ¹Novel Materials and Structural Chemistry Division, Bhabha Atomic Research Centre, India-400085 — ²Institut für Physik, TU Chemnitz, 09107 Chemnitz, Germany

Because of its wide band gap, diamond finds immense application in high temperature microelectronics. Several diamond films were deposited on (111) silicon substrates by a hot filament chemical vapour deposition technique under a variety of experimental conditions. Reflectance infrared spectroscopy was used to investigate the film thickness and its dependence on growth parameters. Transmittance infrared spectroscopy is used to check the phase purity and spatial homogeneity of the films. Presence of residual hydrogen in diamond films is studied for the presence of sp³ as well as sp² carbon and hence for the optimisation of the composition of feed-gas mixture. Further, Raman spectroscopy (both plane-view and cross sectional) and theoretical simulations are employed for a detailed study of the diamond-substrate interface to investigate the presence of embedded layers. Moreover, resonance Raman spectroscopy using silver deposition technique is employed to study the diamond-metal interface and also for the presence of nano-diamond crystallites.