Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 24: Poster II
HL 24.85: Poster
Thursday, March 29, 2001, 10:30–19:00, Rang S\ 3
OPTICAL PROPERTIES OF CuGaSe2 THIN FILMS GROWN BY TWO-SOURCE CVD — •Alexander Meeder, David Fuertes-Marron, Daniel Fischer, Thorsten Dylla, Appavu Mariappan Sembian, Arnulf Jäger-Waldau, and Martha Christina Lux-Steiner — Hahn-Meitner-Institut GmbH, Glienicker Str. 100, 14109 Berlin, Tel: +49-30-80623186, e-mail: meeder@hmi.de
Due to its large direct band-gap (Eg =1.68eV),
CuGaSe2 is an interesting candidate for solar cells
with high open circuit voltage.
The applicability of this material is necessarily linked to
its optical properties.
The combination of absorption and photoluminescence studies,
which is reported in the present work,
gives a broader perspective on the optical properties of
CuGaSe2 thin films.
The CuGaSe2 thin films were grown by open-tube CVD
technique using Cu2Se and Ga2Se3 as source materials.
Iodine and chlorine were used as transport agents
for source materials in the growth process
which allows to prepare layers with different Cu/Ga ratios.
The influence of composition variation on the optical properties
is also reported.
Solar cells (with UOC = 860 mV and η = 4.8 % ) are
prepared and results will be presented.