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HL: Halbleiterphysik

HL 29: Neue Materialien und Verfahren

HL 29.8: Talk

Thursday, March 29, 2001, 12:15–12:30, S17

A new apparatus for the fast x-ray characterization of semiconductor structures — •Alexandre Khartchenko, Donat As, and Klaus Lischka — Universität Paderborn, FB-6 Physik, Warburger Str. 100, D-33095 Paderborn

We report on a new apparatus for the fast x-ray diffraction measurements where the measuring times in order of seconds can be achieved. Based on focusing x-ray optics and built up without goniometer stage the apparatus is not sensitive to precise adjustment of the samples before measurements. Different zincblende ZnSe, ZnCdSe layers grown on the GaAs, wurtzite type AlGaN layers grown on the sapphire and (InGaN/GaN) multiquantum well have been investigated with the new apparatus. Information about lattice mismatch, composition of layers, the period of multiquantum well is obtained. All results are in a good agreement with the results obtained by conventional high resolution equipment. Fast implementation of measurements, no goniometer based setup, independence from possible sample offsets are advantages which makes the new apparatus well suited for its application for fast X-ray analysis of different semiconductor structures during growth process.