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HL: Halbleiterphysik

HL 7: Poster I

HL 7.60: Poster

Monday, March 26, 2001, 10:30–19:00, Rang S\ 3

Structure and luminescence of low temperature InAs QDs grown on [001] GaAs by MBE and subjected to thermal flashing — •Nikolai Zakharov¹, P. Werner¹, G.E. Cirlin^2,3, N.N. Ledentsov^2,4, B.V. Volovik^2,4, N.A. Maleev^2,5, A.E. Zhukov², A.R. Kovsh^2,5, V.M. Ustinov², Zh.I. Alferov², and D. Bimberg⁴ — ¹Max-Planck-Institute for Microstructure Physics, Halle, Germany — ²A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, Russia — ³Institute for Analytical Instrumentation RAS, St.Petersburg, Russia — ⁴Technical University, Berlin, Germany — ⁵Henrich-Hertz Institute, Berlin, Germany

The growth of InAs quantum dots (QD) arrays on GaAs substrate at relatively low temperature (LT) is motivated by the potential possibility to create long-wavelength laser 1.48-1.55 µm. In our investigations the InAs QDs were formed on (100) GaAs substrates at 325^∘C and then covered by thin GaAs layer. At this step, the temperature was abruptly raised up to 600^∘C for some time and dropped again (thermal flash) . After this procedure a thick GaAs cap layer was additionally grown. We have found out that before thermal flashing procedure the sample contains misfit dislocation network and dislocation dipoles near the QDs. The samples subjected to flashing procedure demonstrate almost complete elimination of large QD agglomerates and misfit dislocations. This results in considerable improvement of their PL properties of grown structure.