Hamburg 2001 – wissenschaftliches Programm
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O: Oberflächenphysik
O 12: Grenzfl
äche fest-flüssig
O 12.5: Vortrag
Montag, 26. März 2001, 17:15–17:30, K
Charging at Si surfaces in fluoride solutions: an in-situ photovoltage investigation — •Joerg Rappich1, Thomas Burke1,2, Sandra Lust3, Claude Levi-Clement3, and Thomas Dittrich2 — 1Hahn-Meitner-Institut, Abt. Si-Photovoltaik, Kekulestr.5, D-12489 Berlin, Germany — 2Technische Universitaet Muenchen, Physik Department E16, D-85748 Garching, Germany — 3Laboratoire de Chimie Metallurgique des Terres Rares, CNRS UPR 209, 2/8 rue Henri Dunant, F-94320 Thiais, France
The charging at Si surfaces in fluoride solutions has been studied in-situ by pulsed photovoltage during electrochemical treatments. The Si surface charges positively with onset of the formation of porous silicon. A negative charging of the Si surface takes place during oxide removal in fluoride solution when the electrolyte reaches the Si surface while the negative charge is replaced during the following hydrogenation process of the Si surface. The process of negative charging / discharging is independent of the type of the removed oxide. The positive and negative charging at Si surfaces in fluoride containing electrolytes is related to the formation of surface states at intermediate chemical complexes.