Hamburg 2001 – wissenschaftliches Programm
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O: Oberflächenphysik
O 13: Postersitzung (Adsorption auf Oberfl
ächen, Oberfl
ächenreaktionen, Elektronische Struktur, Epitaxie und Wachstum, Halbleiteroberfl
ächen und Grenzfl
ächen, Oxide und Isolatoren)
O 13.18: Poster
Montag, 26. März 2001, 19:00–22:00, Foyer zu B
Interaction of Si with lanthanide metal surfaces — •A. Yu. Grigoriev1,2, C. Schüßler-Langeheine1, H. Ott1, D. V. Vyalikh1,2, R. Meier1, C. Mazumdar1, V. Adamchuk2, G. Kaindl1, and E. Weschke1 — 1Institut für Experimentalphysik, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany — 2Institute of Physics, St. Petersburg State University, Uljanovskaja 1, 198904 St. Petersburg, Russia
The combination of in-situ x-ray diffraction (XRD) and photoemission (PE) has been used to study the interface formation upon Si deposition on the surfaces of thin monocrystalline lanthanide metal films. XRD with comparably large probing depth allows to monitor the reaction kinetics, while with PE the concomitant changes in the electronic structure can be explored. In the case of divalent Yb metal, substantial diffusion of Si was found even at temperatures as low as 40 K. Annealing leads to continued reaction, with a diffusion depth depending on the initial thickness of the Si layer. In contrast, trivalent lanthanide metals, having much larger cohesive energy, are found to be inert upon annealing, leading to the formation of silicide islands on the clean metal surface.