Hamburg 2001 – wissenschaftliches Programm
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O: Oberflächenphysik
O 18: Halbleiteroberfl
ächen und -grenzfl
ächen
O 18.1: Vortrag
Dienstag, 27. März 2001, 11:15–11:30, M
Photoluminescence measurements of the electronic properties of hydrogenated and reconstructed Si surfaces — •Thomas Dittrich1, Frederick Koch1, Thomas Bitzer2, Thomas Rada2, Neville V. Richardson2, Joerg Rappich3, and Victor Yu. Timoshenko4 — 1Technische Universitaet Muenchen, Physik Department E16, D-85748 Garching, Germany — 2St. Andrews University, School of Chemistry, Fife Ky16 9ST, UK — 3Hahn-Meitner-Institut, Abt. Si-Photovoltaik, Kekulestr. 5, D12489-Berlin, Germany — 4M. V. Lomonosov Moscow State University, Faculty of Physics, 119899 Moscow, Russia
Photoluminescence measurements have been used to investigate the formation and quenching of electronic states in the band gap at clean and hydrogenated Si surfaces under ultra-high vacuum condition. The surface structure has been determined with high-resolution electron energy loss spectroscopy (HREELS) and low energy electron diffraction (LEED). We observe that the dissociative adsorption of water at room temperature results in a quenching of surface states. In contrast, the thermally induced dehydrogenation of Si(111):H increases dramatically the density of recombination centres at the Si surface. The role of dangling bonds at the surface on the gap state density will be discussed.