Hamburg 2001 – wissenschaftliches Programm
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O: Oberflächenphysik
O 25: Postersitzung (Grenzfl
äche fest-flüssig, Methodisches, Nanostrukturen, Organische Dünnschichten, Rastersondentechniken, reine Oberfl
ächen, Teilchen und Cluster, Zeitaufgelöste Spektroskopie, Sonstiges)
O 25.25: Poster
Mittwoch, 28. März 2001, 15:00–18:00, Foyer zu B
Extraordinary structural order and charge carrier mobility in thin films of diindenoperylene — •A. Dürr1, M. Münch2, N. Karl2, F. Schreiber1,3, V. Kruppa1, B. Krause1, K. Ritley1, and H. Dosch1,3 — 1Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, D-70569 Stuttgart — 23. Physikalisches Institut , Universität Stuttgart, D-70569 Stuttgart — 3Institut für Theoretische und Angewandte Physik, Universität Stuttgart, D-70550 Stuttgart
Thin films of vapor-deposited diindenoperylene (DIP) are studied using x-ray scattering in various geometries (specular and diffuse reflectivity, high-angle (Bragg) scattering, grazing-incidence diffraction (GID)) and non-contact atomic force microscopy (NC-AFM).
The films are found to order coherently over the entire thickness as seen from the fact that the total film thickness derived from Kiessig interferences corresponds to the coherence lengths derived from Laue oscillations around the out-of-plane Bragg reflections.
The rocking widths are as narrow as 0.02∘ and less. NC-AFM reveals that the surface morphology exhibits monomolecular steps. The roughness correlations are investigated using statistical analysis of the NC-AFM data and diffuse x-ray scattering.
It is shown that the charge carrier mobility as measured in the thin-film transistor (TFT) geometry (anti-)correlates with the degree of order as characterized by the rocking widths of the DIP films varied over a wide range by the preparation conditions.In the highest-quality films, the hole mobility amounts to 0.1 cm2/Vs.