Osnabrück 2002 – wissenschaftliches Programm
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MS: Massenspektrometrie
MS 1: Poster
MS 1.7: Poster
Mittwoch, 6. März 2002, 11:00–13:00, Schloss
Carbon in single cristalline silicon — •B. Wiedemann1, J. D. Meyer1, H. Ch. Alt2, H. Riemann3, and B. Lux3 — 1Institute for Nuclear Physics, J.W. Goethe-University, August-Euler-Str. 6, D-60486 Frankfurt am Main — 2Engineering Physics, FHM - University of Applied Sciences, P.O. BOX 200113, D-80001 Munich — 3Institute of Crystal Growth, Max-Born-Str. 2, D-12489 Berlin
Carbon in silicon plays an important role in oxygen precipitation for the intrinsic gettering of undesirable impurities in silicon devices. Therefore, accurate measurements of carbon concentrations are necessary in order to control the oxygen precipitation process. Mass spectrometric, optical and nuclear physical measurements have been carried out on carbon containing floating zone and Czochralski silicon single crystals. The FTIR difference method is calibrated quantitatively against the SSMS method with the calibration coefficient F80K = [C]/Δα = 4.4·1016 cm−2 for 12C at 607.5 cm−1 in silicon for cryogenic temperatures below 80 K. The intercept of the linear relationship between carbon concentration [C] and infrared absorption Δα corresponds to the carbon concentration in the reference sample which is used for the FTIR difference method. The relative sensitivity coefficient RSC = [C]SSMS/[C]CPAA = 0.80 is taken into account to calibrate the carbon concentration measured by SSMS. The CPAA is used as reference method by means of the nuclear reaction 12C(d,n)13N.