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Regensburg 2002 – scientific programme

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DS: Dünne Schichten

DS 15: Ionenimplantation: Erzeugung, Nachweis und Ausheilung von Defekten

DS 15.4: Talk

Wednesday, March 13, 2002, 16:00–16:15, HS 32

Composition and structure of mechanically polished Si surfaces by resonant RBS — •E. Wendler1, S. Downes2, C. Jeynes3, J.F. Watts4, J.L. Keddie5, and K.E. Puttick51Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Jena, Germany — 2National Physical Laboratory, Teddington, U.K. — 3University of Surrey, Ion Beam Centre, Guildford, U.K. — 4University of Surrey, School of Mechanical & Materials Engineering, Guildford, U.K. — 5University of Surrey, Department of Physics, Guildford, U.K.

Si wafers of different orientations ((100), (110), (111), (211) and (311)) were mechanically polished at the National Physical Laboratory using a procedure comparable with that applied when fabricating Si spheres for the Avogadro project. For each orientation the amount of O atoms at the surface is measured by elastic backscattering spectrometry of 3.03 MeV He ions. Resulting oxide layer thicknesses are compared to those obtained by spectroscopic ellipsometry and photoelectron spectroscopy. Furthermore, information is extracted about the damage in the Si adjacent to the oxide from the RBS spectra taken in channelling configuration with 1.5 MeV He ions.
Our results show that RBS is capable to give useful information with respect to surface oxide and surface damage, even if the layers are only few nanometers thick. The mechanical polishing introduces additional defects, the concentration of which is highest for the higher-index axes. The resulting oxide layer thicknesse are larger than those obtain by the optical measurements, suggesting that the bulk optical constants may not be valid for such thin layers.

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