Regensburg 2002 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 11: Poster 1

HL 11.83: Poster

Montag, 11. März 2002, 17:00–19:30, Poster A

Electronic structure of HfSe₂ single crystals — •Ralf Severin, Torsten Stemmler, Christof Gaiser, Thorsten Zandt, Christoph Janowitz, and Recardo Manzke — Institut für Physik, Humboldt-Universität zu Berlin, Invalidenstr. 110, 10115 Berlin

HfSe₂ belongs to the large family of layered transition metal dichalcogenides whose crystal structure results from the stacking of sheets of hexagonal packed atoms. It consists of weakly coupled sandwich layers Se-Hf-Se in which an Hf-atom layer is enclosed within two selenium layers. HfSe₂ crystallizes in the 1T structure and is a semiconductor with an indirect band gap of 1.13ẽV. Since the optical band gap is matching well with the solar spectrum HfSe₂ is a good candidate for photovoltaic applications.

In this contribution we present the experimentally derived electronic band structure of HfSe₂ using high-resolution angle-resolved photoelectron spectroscopy (ARPES) which will be compared with a new LDA-calculation.