Regensburg 2002 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 25: Symposium: II-VI Halbleiter

HL 25.2: Fachvortrag

Mittwoch, 13. März 2002, 15:00–15:30, H15

ZnO based technologies : present state and prospective application in optoelectronics and spinelectronics — •A. Waag, Th. Gruber, Ch. Kirchner, K. Thonke, W. Limmer, and R. Sauer — Department of Semiconductor Physics, Ulm University, Germany

Due to its band gap of 3.3eV and exciton binding energy of 60meV ZnO is a very interesting candidate for UV optoelectronics. Beyond that, the incorporation of magnetic impurities allows to fabricate semimagnetic semiconductors, which are potentially ferromagnetic at room temperature. Recent results on the MOCVD growth of ZnO will be reported and compared to the status of MBE-ZnO material. The optimization of the MOCVD process on various substrates will be described. DEZn and an alcohole has been used as Zn- and oxygen precursor, respectively. The ZnO MOCVD layers have been analyzed by HRXRD, PL, Hall, AFM and spatially resolved Raman measurements. An overview on the status and future potential of a ZnO based technology for optoelectronics and spin electronics will be given.