Regensburg 2002 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 38: Poster 2

HL 38.70: Poster

Donnerstag, 14. März 2002, 16:30–19:00, Poster A

Analysis of local electrical properties of grain boundaries in Si by electron-beam-induced-current techniques — •Stanislav Pandelov1,2, Winfried Seifert3,2, Martin Kittler3,2, and Jürgen Reif1,21BTU Cottbus, LS Experimentalphysik II, Universitätsplatz 3-4, 03044 Cottbus — 2JointLab BTU/IHP, Universitätsplatz 3-4, 03044 Cottbus — 3IHP, Im Technologiepark 25, 15236 Frankfurt (Oder)

The wide use of low-cost multicrystalline silicon in photovoltaics has triggered an increasing interest in electrical properties of extended defects such as dislocations and grain boundaries (GBs). We have applied two different electron beam induced current (EBIC) techniques to locally characterize GBs with respect to barrier height and recombination activity: (i) a technique utilizing the potential barrier at a GB (GB-EBIC) [1,2], and (ii) standard EBIC using a Schottky junction for charge collection. The GB electrical activity was studied as a function of both temperaure and injection level.

It is also found that GBs showing a barrier and substantial recombination current in GB-EBIC are not necessarily highly active under conditions of standard EBIC. Vice versa, GBs with a high recombination activity in standard EBIC may not show contrast in GB-EBIC. The different electrical behavior will be discussed as caused by differences in kind and density of traps at the GB. We believe that the particular GB activity is mainly controllde by contamination

[1] H.F. Matare, C.W. Laakso, Appl.Phys.Lett. 13, 216 (1968)

[2] J. Palm, J.Appl.Phys. 74, 2 (1993)

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