Regensburg 2002 – wissenschaftliches Programm
HL 38.71: Poster
Donnerstag, 14. März 2002, 16:30–19:00, Poster A
PHOTOLUMINESCENCE AND EBIC RECOMBINATION BEHAVIOR OF EXTENDED DEFECTS IN SOLAR GRADE SILICON — •Tzanimir Arguirov1,2, Winfried Seifert1,3, Martin Kittler1,3, and Jürgen Reif1,2 — 1JointLab BTU/IHP, Universitätsplatz 3-4, 03044 Cottbus — 2BTU Cottbus, LS Experimentalphysik II, Universitätsplatz 3-4, 03044-Cottbus — 3IHP, Im Technologiepark 25, 15236 Frankfurt (Oder)
Dislocations can significantly influence the performance of solar cells due to their electrical activity. They show different activity depending on their contamination. Recently, it was found that the temperature behavior of the recombination activity, measured by EBIC gives quantitative information about the contamination level at dislocations. Partly, dislocation related D-band luminescence can be observed. Therefore we looked for the correlation between the luminescence features and the overall recombination activity in mc-Si at different temperatures. At room temperature, the areas of high recombination activity show an increased D1 luminescence and a strong reduction of band-band luminescence. At low temperature (80K) the EBIC contrast increases together with the D-band intensity and two more lines (D3 and D4) appear. At some places of the sample, a luminescence peak at 1.04 eV, which might be related to oxygen, was observed.