Regensburg 2002 – wissenschaftliches Programm

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SYME: Mechanical Properties of Thin Films

SYME IV: HV IV

SYME IV.1: Hauptvortrag

Dienstag, 12. März 2002, 16:30–17:00, H 16

Adhesion and Fracture in Thin-Film Device Structures: Experiments and Multi-Scale Simulations — •Reinhold H. Dauskardt — Dept. of Materials Science, Stanford University, Stanford, CA, USA

The implementation of new dielectric and conducting materials together with increasingly complex patterned structures represents a critical step in the drive towards improved performance of thin-film device technologies. While the mechanical reliability of these complex devices often represents a critical limitation for new technologies, they also provide a unique opportunity to study the underlying physics and fundamental mechanisms of deformation and fracture with unprecedented control of composition and length scales. In this presentation, the fracture and deformation properties of representative thin-film structures involving thin glass, polymer and metal layers are examined. Interface fracture studies are described to characterize the underlying mechanisms and kinetics of the debonding process under selected loading and environmental conditions. Multi-scale mechanics models are developed to explain the effect of a range of salient interface properties that include the peak interface cohesive strength and morphology, the effect of plasticity in adjacent ductile layers, the activity of environmental species, and the mechanical loading mode. Finally, the effect of length scales and geometry in more complex patterned thin-film structures are examined. Yield properties, plastic energy dissipation and resistance to debonding are described for a range of patterned channels with selected aspect ratios and dimensions.