Regensburg 2002 – wissenschaftliches Programm
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SYOH: Organische Halbleiter
SYOH 2: Growth and Characterisation
SYOH 2.2: Vortrag
Montag, 11. März 2002, 11:15–11:30, H37
Molecular Alignment in Phthalocyanine Thin Films on Stepped Al2O3 Surfaces — •J. Oriol Ossó1,2, Volker Kruppa1, Esther Barrena1, Frank Schreiber1,3, Helmut Dosch1,3, Miquel Garriga2, M. Isabel Alonso2, and Fernando Cerdeira2,4 — 1Max-Planck-Institut für Metallforschung, Heisenbergstr. 1, 70569 Stuttgart, Germany — 2Institut de Ciència de Materials de Barcelona, CSIC, 08193 Bellaterra, Spain — 3Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 70550 Stuttgart, Germany — 4Instituto de Física “Gleb Wataghin”, UNICAMP, 13.083-970 Campinas S.P., Brazil
We report a multi-technique study of the growth, structure, and electronic properties of thin films of F16CuPc (copper-hexadecafluorophthalocyanine) on stepped sapphire surfaces. If prepared under suitable conditions the films exhibit very good out-of-plane order (rocking widths of about 0.02∘), small roughness, and align remarkably well in-plane without the formation of azimuthal domains. The nucleation of film growth is investigated by AFM. We believe that the azimuthal alignment on sapphire is induced by the step edges along the c-axis of the sapphire, which serve as templates for the growth. The absence of multiple orientational domains can be exploited for efficient in-plane charge transport in the direction of maximum overlap of the π-orbitals. The implications for organic semiconductor devices are discussed.