Regensburg 2002 – wissenschaftliches Programm
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SYOH: Organische Halbleiter
SYOH 7: Poster
SYOH 7.12: Poster
Montag, 11. März 2002, 18:00–21:00, C
Structure, morphology and thermal stability of metal contacts on crystalline organic thin films — •Arndt C. Dürr1,2, Frank Schreiber1,2, Marion Kelsch1, Heinz D. Carstanjen1,2 und Helmut Dosch1,2 — 1Max-Planck-Institut für Metallforschung, 70569 Stuttgart — 2Institut für Theoretische und Angewandte Physik, Universität Stuttgart
Due to their potential in electronic and optoelectronic applications, semiconducting organic materials are in the focus of a rapidly increasing research activity. Organic field effect transistors, organic light emitting diodes, or organic solar cells are only few examples of taylored organic device structures. Besides high charge-carrier mobilities in the organic layer the proper function of the contact between metal and the organic layer is of great importance for the device performance. Thus, knowledge of the associated morphology of the metal-organic interface as well as its thermal stability is crucial. In this contribution we present a study of the fundamental question under which conditions it is possible to prepare a sharp and well-defined interface between gold and diindenoperylene thin films (DIP, C32H16) as a model for metal-contacts on organic electronic devices. In addition we discuss the thermal stability of the organic layer and of the interface-morphology subject to an annealing treatment that simulates elevated operation temperatures in organic electronic devices. We found that for Au/DIP the thermal stability is sufficient for use in typical device structures.