Regensburg 2002 – wissenschaftliches Programm
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SYOH: Organische Halbleiter
SYOH 7: Poster
SYOH 7.15: Poster
Montag, 11. März 2002, 18:00–21:00, C
Determination of Optical Constants of Me-PTCDI Layers Grown on GaAs(100) — •A.M. Paraian1, M. Friedrich1, S. Park1, T. Wagner2, T.U. Kampen1, and D.R.T. Zahn1 — 1Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany — 2LOT-Oriel GmbH & Co. KG., Im Tiefen See 58, 64293 Darmstadt, Germany
The application of spectroscopic ellipsometry (SE) for the characterization of organic layers will be discussed and results for N,N-dimethylperylene-3,4,9,10-bis(dicarboximide) (Me-PTCDI) grown on sulfur passivated GaAs(100) surface are presented. The SE spectra for Me-PTCDI layers were taken ex situ at room temperature in the visible and near UV range for different sample orientation and angles of incidence. The ellipsometry spectra show strong differences for different measurement geometries leading to the conclusion of a strong anisotropy in the optical constants of the organic film. The spectra analysis consists of several steps: in the first step, the thickness of the film was determined using a model, which describes the dispersion of optical constants using a Cauchy layer model. In the next step having the thickness as a fixed parameter, a point-by-point fit was performed in order to determine the optical constants of the film. By exploiting the capabilities of spectroscopic ellipsometry the optical constants in the x, y and z directions were determined along with the orientation of the optical axis.