Regensburg 2002 – wissenschaftliches Programm

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SYOH: Organische Halbleiter

SYOH 7: Poster

SYOH 7.31: Poster

Montag, 11. März 2002, 18:00–21:00, C

On the relevance of models for the description of organic field effect transistors — •Thomas Lindner¹, Susanne Scheinert², and Gernot Paasch¹ — ¹IFW Dresden — ²TU Ilmenau

Until now most analyses of OFET current characteristics are based on the simple Shockley model which allows one only approximately to extract the mobility. Proposals do exist that the operation is similar to the a-Si thin film transistor. In contrast to microelectronics 2D simulations have rarely been used. In our previous simulations the OFET and capacitor data of PPV and P3AT based devices with different insulators are described well (apart from hysteresis effects) by assuming p-doping and eventually deep acceptor-like traps either at the interface or in the bulk. In general, there arises the question on the uniqueness of the models even if experimental data can be reproduced well. Here we present a simulation study comparing models which differ essentially with respect to the type of states in the gap. We include either separately or in combination with each other (i) shallow acceptor doping (ii) deep acceptor-like traps either discrete or with a distribution (iii) tail states and electron and hole traps distributed near the conduction and valence bands (the equivalent to the a-Si thin film transistor). From the comparison conclusions are drawn under which conditions one can evaluate the relevance of the models and what type of additional experimental information is needed for a selection of the most probable model.