Regensburg 2002 – wissenschaftliches Programm

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SYPF: Struktur und Dynamik in dünnen Polymerfilmen

SYPF 1: Structure and Dynamics in Thin Polymer Films

SYPF 1.14: Vortrag

Donnerstag, 14. März 2002, 16:30–16:50, H37

Photo resist line collapse as an interface problem — •Odo Wunnicke and Guenther Czech — Infineon Technologies, Koenigsbruecker Str. 180, 01099 Dresden

Polymer-based photo resists are used in optical lithography for structuring of lines and contact holes with lateral dimensions down to 70nm for microelectronic applications. A typical processing sequence consists of exposure with UV light (193nm), baking steps, wet-development, water rinse and dry spinning. During drying capillary forces are present as a result of the surface tension of the water. Depending on the aspect ratio of height to width of the lines, the capillary forces can result in a deflection of the lines. Line collapse occurs if the capillary forces exceed the elastic restoring forces of the polymer. The lines keep bending until contact adhesion failure or plastic deformation. In both cases the resist pattern is destroyed. Line collapse can be reduced by the addition of surfactants to the water rinse to adjust the wetting properties of the resist line edges. For the application of surfactants the surface properties of the line edges must be determined. A first surface analysis in terms of dominant in-plane length and chemical composition of exposed photo resist surfaces is presented.

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