Regensburg 2002 – wissenschaftliches Programm

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SYRE: Rastersonden- und Elektronenmikroskopie an Domänenstrukturen

SYRE IV: HV IV

SYRE IV.1: Hauptvortrag

Dienstag, 12. März 2002, 11:00–11:30, H11

Fine structure of interfaces and domain boundaries in ferroelectrics and other materials — •Gustaaf van Tendeloo — EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerpen, Belgium

Electron microscopy has evolved from a qualitative technique to a quantitative technique. HREM allows to characterize the interfaces down to an atomic scale and to measure local atomic displacements with a precision of 0.01 nm. We will illustrate this for BaTiO3, BMT and LSMO on a STO substrate.
In situ TEM at HREM also allows to study phase transitions with far more precission than before.
EELS (electron energy loss spectroscopy) allows to determine and particularly to map the local chemical composition. Recently however a lot of progress has been made as to the quantitative interpretation of the data. This has allowed (and will allow) to obtain also local electronic information on the oxidation state of the elements.
The strength of modern electron microscopy lies in the combination of the information provided by the different techniques.