Regensburg 2002 – wissenschaftliches Programm

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SYRE: Rastersonden- und Elektronenmikroskopie an Domänenstrukturen

SYRE VI: HV VI

SYRE VI.1: Hauptvortrag

Dienstag, 12. März 2002, 12:00–12:30, H11

Nanoscale phenomena in synthetic functional Oxide heterostructures – role of interfaces — •Ramamoorthy Ramesh — Department of Physics, Materials Research Science and Engineering Center, University of Maryland, College Park, MD 20742, USA

Over the past six years, we have focused considerable effort on understanding the growth and characterization of functional oxide thin films and heterostructures, specifically ferroelectric, dielectric and magnetic perovskites. Using both epitaxial and polycrystalline materials on a variety of substrates as test vehicles, we have been carrying out systematic studies on the effect of composition, point defect chemistry, strain and processing variables on the microstructure and physical properties. A novel aspect of our work is the combined use of focused ion beam milling and scanning force microscopy techniques to understand the influence of film microstructure on the relevant properties at the nanoscale. This presentation will address two problems and approaches to understand and solve them: (i) the materials science of thin conducting barrier layers that enable the integration of the complex oxides on a silicon surface; (ii) domains in epitaxial films and mapping of their dynamics using scanned force microscopy. In this presentation, I will describe some possible areas where fundamental measurements in conjunction with theoretical studies and modeling will enable a better understanding of the complex phenomena involved in these materials, especially the role of structural, chemical and functional interfaces (such as domain walls).
The work at Maryland is supported by the NSF-MRSEC.