Aachen T 2003 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
T: Teilchenphysik
T 403: Halbleiterdetektoren IV
T 403.3: Vortrag
Mittwoch, 12. März 2003, 14:30–14:45, FO8
Simulation of Irradiated Silicon Detectors for Future High Energy Physics Experiments — •D. Contarato1 and G. Kramberger2 — 1Universität Hamburg, Institut für Experimentalphysik, Luruper Chaussee 149, D-22761 Hamburg (Germany) — 2Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg (Germany)
This study addresses the simulation of signal formation and charge collection properties in silicon detectors used for tracking purposes in High Energy Physics experiments. Simulations have been performed using a commercially available simulation package and custom-made software, focusing on the dependence of the sensor performances on its geometrical design and on radiation-induced bulk and surface damage.
Results are presented for different sensor designs ranging from microstrips and pixels to the recently proposed semi-3D structures, addressing the feasibility of such geometries in order to meet the challenging requirements of the tracking detectors of future experiments like the luminosity upgrade of the Large Hadron Collider (LHC) or the planned e+e− Linear Collider (TESLA).