Dresden 2003 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 19: Ionenstrahlverfahren II – Oberfl
ächenmodifizierung
DS 19.3: Vortrag
Donnerstag, 27. März 2003, 17:30–17:45, GER/37
Effect of Interfacial Free Energy on Swift Heavy Ion Induced Mixing in Fe/Si Multilayers — •S.K. Srivastava1, H.D. Carstanjen1, A. Tripathi2, D. Bhattacharya3, D. Kabiraj2, W. Bolse4, and D.K. Avasthi2 — 1Max-Planck-Institut für Metallforschung, 70569, Stuttgart, Germany — 2Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi, India — 3Variable Energy Cyclotron Centre, Kolkata, India — 4Institut für Strahlenphysik, Universität Stuttgart, Germany
The fact that a thermal spike mechanism, and hence thermodynamic processes, are responsible for swift heavy ion (SHI) induced mixing across interfaces has started gaining wide acceptance. The free energies associated with the interfaces, thus, are supposed to affect such thermodynamic processes. Two e-beam evaporated Fe/Si multilayer stacks with structures (a) [Fe(∼40 Å)/Si (∼165 Å)]×4 and (b) [Fe(∼45 Å)/Si(∼145 Å)] ×5 and thus exhibiting by ∼10 % different free energies per unit volume (ΔG), were irradiated by 350 MeV Au ions at 4.2 × 1013 ions/cm2 fluence. High resolution Rutherford backscattering spectrometry (HRBS) measurements were performed for the first time to study SHI induced mixing in any system, in general, and on these Fe/Si multilayers, in particular. The amount of mixing is ∼25% higher in the stack b ( with higher ΔG) than in the stack a, as expected. The result, thus, supports the validity of the thermal spike model as the mechanism responsible for SHI mixing.