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Dresden 2003 – scientific programme

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HL: Halbleiterphysik

HL 11: SiC I

HL 11.6: Talk

Monday, March 24, 2003, 16:30–16:45, BEY/154

Characterization of ALCVD-Al2O3 thin films on 6H-SiC(0001) — •K.Y. Gao1, F. Ciobanu2, Th. Seyller1, L. Ley1, G. Pensl2, A. Taddich3, J.D. Riley3, and R.G.C. Leckey31Institut für Technische Physik, Universität Erlangen-Nürnberg, Germany — 2Institut für Angewandte Physik, Universität Erlangen-Nürnberg, Germany — 3Department of Physics, La Trobe University, Australia

Atomic Layer CVD was used to grow Al2O3 films on H-terminated, OH-terminated, and oxide terminated (silicate adlayer) 6H-SiC(0001) surfaces. The growth and interface properties were studied by X-ray induced photoelectron spectroscopy (XPS) and ellipsometry. The dependence of the Al2O3 film thickness on the number of deposition cycles indicates a layer-by-layer growth mode with an incubation period at the beginning of the growth. Additional ellipsometric measurements of thick films revealed that the Al2O3 films had an index of refraction of n=1.66 and the average growth rate was 1.0 Å per cycle. The XPS data further suggest that there is no SiOx interface layer formed on H-terminated 6H-SiC(0001). This is corroborated by surface sensitive XPS measurements using synchrotron radiation of ultrathin layers of Al2O3 on H-terminated SiC(0001). On the other hand there is a clear interface layer observable when the substrate surface is prepared using the hydrogen plasma. Admittance spectroscopy measurements showed that the density of interface traps (Dit) was the lowest on H-terminated 6H-SiC(0001) (ca. 5×1011 cm−2eV−1 at 0.1 eV below CBM) and highest on the oxide terminated surface (4×1012 cm−2eV−1 at 0.1 eV below CBM).

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