Dresden 2003 – scientific programme
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HL: Halbleiterphysik
HL 14: Poster I
HL 14.68: Poster
Monday, March 24, 2003, 17:00–19:30, HSZ/P2
A dominant radiation defect in boron-doped silicon revealed by hydrogenation — •N. Yarykin1 and J. Weber2 — 1Institute of Microelectronics Technology RAS, Chernogolovka, Moscow region, 142432 Russia — 2Technische Universität Dresden, 01062 Dresden, Germany
The novel H3 center (Ev+0.535 eV) is formed in the MeV-electron-irradiated boron-doped silicon due to the addition of one hydrogen atom to an unknown radiation defect. The center is the most abundant among all defects detected by the deep-level transient spectroscopy (DLTS) in the samples with boron concentration of (2–20)×1015 cm−3, and is not detected in the aluminum- and phosphorus-doped crystals. Electrical properties and thermal stability of the H3 center are studied in detail. The analysis of the defect introduction rate in crystals with different impurity contents leads to a preliminary identification of the H3 center as the BiCsH complex.
The work is supported by Deutsche Forschungsgemeinschaft (436 RUS 113/166/0) and Russian Foundation for Basic Research (RFBR-DFG 00-02-04002).