Dresden 2003 – scientific programme
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HL: Halbleiterphysik
HL 14: Poster I
HL 14.73: Poster
Monday, March 24, 2003, 17:00–19:30, HSZ/P2
Self-consistent calculations of potential energy and charge distributions for strained Si/SiGe based semiconductor devices — •P. N. Racec1,2, Mirela Georgescu1,3, E. R. Racec1,3, and Ulrich Wulf1 — 1Faculty 1, Brandenburg University of Technology Cottbus, PO Box 101344, 03013 Cottbus, Germany — 2National Institute of Materials Physics, PO Box MG 7, 76900 Bucharest, Romania — 3Faculty of Physics, University of Bucharest, PO Box MG 11, 76900 Bucharest, Romania
We have used a local theory for calculating the potential energy and charge distribution for Si1-xGex based semicondcutor devices, taking properly into account the strain dependence of the material parameters. They were taken from a theoretical model which involves the strain effect [M.M.Riegel and P.Vogl, Phys.Rev. B 48, 14276 (1993)]. The particular analyzed structure is a heterobipolar transistor, with Si1-xGex layer as base. The base presents a position dependent Ge content. We have analyzed the effect of the temperature, the doping, and the Ge-content on the potential energy and the charge distribution.