Dresden 2003 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 40: Grenz- und Oberfl
ächen

HL 40.2: Vortrag

Donnerstag, 27. März 2003, 11:15–11:30, BEY/154

XPS Study of Hydrosilylated Crystalline and Amorphous Silicon Surfaces — •Andrea Lehner, Florian Kohl, Georg Steinhoff, Martin Eickhoff, Martin S. Brandt, and Martin Stutzmann — Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

The design of sensors for biochemical and biophysical applications often demands a stable, densely packed organic monolayer covalently bonded directly to the silicon surface. A common starting process for such a functionalization is the hydrosilylation of hydrogen-terminated silicon surfaces with alkenes. In this study the hydrosilylation of the (111) surface of crystalline silicon and hydrogenated amorphous silicon surfaces are compared. Systematic XPS measurements showed that residual oxide layers on the surface have a negative influence on the degree of hydrosilylation achievable. Although oxidation can be minimized for crystalline silicon surfaces by proper treatment, it never can be avoided completely. On the other hand, formation of a natural oxide on the surface of hydrogenated amorphous silicon is much slower. Therefore, hydrogenated amorphous silicon provides a better starting point for a complete hydrosilylation than crystalline (111) silicon.