Dresden 2003 – scientific programme
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O: Oberflächenphysik
O 10: Elektronische Struktur II
O 10.1: Talk
Monday, March 24, 2003, 15:00–15:15, FOE/ORG
Quasicontinuous umklapp processes in a Gd overlayer as a probe of the bulk dispersion of a W(110) substrate — •O. Rader1 and A. M. Shikin1,2 — 1BESSY Berlin — 2St. Petersburg State University
Bandgap photoemission from W(110) shows strong variations in the dominating photoemission features upon deposition of submonolayers of Gd. The detailed coverage-dependent data bear a striking similarity to the W bulk band dispersion as measured as function of the bulk wave vector. Based on resonant valence band photoemission, Gd4f and W4f photoemission, and thorough coverage-dependent studies, the observed effect is explained as umklapp process caused by the Gd overlayer which, due to repulsive Gd-Gd interaction, provides a continuously changing superlattice k-vector when the Gd coverage is varied.