Dresden 2003 – scientific programme
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O: Oberflächenphysik
O 12: Postersitzung (Struktur und Dynamik reiner Oberfl
ächen, Grenzfl
äche fest-flüssig, Nanostrukturen, Teilchen und Cluster, Halbleiteroberfl
ächen und Grenzfl
ächen, Zeitaufgelöste Spektroskopie, Rastersondentechniken, Methodisches)
O 12.30: Poster
Monday, March 24, 2003, 18:00–21:00, P1
Investigation of the interface between SiO2 and 4H-SiC(0001) by angle-scanned photoelectron diffraction — •Mark Schürmann, Stefan Dreiner, Ulf Berges, and Carsten Westphal — Universität Dortmund, Experimentelle Physik I, 44221 Dortmund, Germany
In this work the SiO2/SiC interface was studied by angle-scanned photoelectron diffraction. XPS spectra were recorded at the U41-PGM beamline at BESSY II to obtain high flux and an energy-resolution which was sufficient to distinguish between different silicon oxidation states.
Clean 4H-SiC(0001) surfaces were thermally oxidised in UHV. The oxidation was started from the silicon-terminated √3×√3 R30∘ surface and resulted in a thin SiO2 layer on top of the SiC bulk. Afterwards, the interface between SiO2 and SiC was investigated by high-resolution angle-resolved XPS. First spectra and diffraction patterns will be presented in this contribution.