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O: Oberflächenphysik

O 12: Postersitzung (Struktur und Dynamik reiner Oberfl
ächen, Grenzfl
äche fest-flüssig, Nanostrukturen, Teilchen und Cluster, Halbleiteroberfl
ächen und Grenzfl
ächen, Zeitaufgelöste Spektroskopie, Rastersondentechniken, Methodisches)

O 12.62: Poster

Montag, 24. März 2003, 18:00–21:00, P1

Cleaning of semiconductor surfaces by low energy hydrogen broad ion beam at low substrate temperatures — •Nasser Razek, Thomas Chasse, and Axel Schindler — Leibniz-Institut für Oberflächenmodifizierung, Permoserstr. 15, D-04318 Leipzig

A new approach technology for the cleaning of surface of III-V-compounds (GaAs and InP) and Si using low energy < 800 eV hydrogen bombardment with the help of a broad ion beam source. The method seems promising compared to conventional cleaning techniques considering to overcome problems such as thermal stress introduction, unintentional doping by impurities, defect generation and surface roughness enhancement. The surface chemistry of the semiconductor has been investigated using X-ray photoelectron spectroscopy (XPS) in dependence on the H⁺ ion fluencies and temperature. Surface morphologies were studied with AFM. Nearly a complete contamination removal (native oxides and carbon) was achieved at surface temperature < 400^∘C which is hard to obtain by conventional cleaning technologies.