Dresden 2003 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
TT: Tiefe Temperaturen
TT 16: Mechanismus der HTSL
TT 16.6: Vortrag
Donnerstag, 27. März 2003, 11:40–11:55, HSZ304
One- and three-layer Bismuth cuprates: A study by high resolution angular-resolved photoemission. — •L. Dudy1, C. Janowitz1, H. Dwelk1, A. Krapf1, B. Müller1, R.-St. Unger1, R. Müller1, R. Manzke1, and H. Höchst2 — 1Humboldt-Universität zu Berlin, Institut für Physik, Invalidenstr 110, 10115 Berlin — 2Synchrotron Radiation Center, Stoughton, WI 53589, U.S.A.
The homologous series of the Bi-cuprates scales its transition temperatures (Tc) in dependence of the number of CuO2-layers per unit cell, starting from Bi2201 (Tcmax ≈ 29 K) as one-layer material to Bi2223 (Tcmax ≈ 110 K) as three-layer material. To understand the complex Bi-cuprates, we start with the simplest i.e. one-layer material Bi2201. If part of the Bi is substituted by Pb, this results in a Fermi surface free of diffraction replica. We present temperature dependent ARPES measurements of this material. We were able to observe a two-peak structure which for optimally doped samples exists only at temperatures below 110 K. A possible interpretation of these data is that the superconductivity is generated by an one-dimensional behavior of the low energy excitations. Furthermore, temperature dependent ARPES data of Bi2223 are discussed.
Supported by the DFG (MA2371/1-3).