Regensburg 2004 – wissenschaftliches Programm

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DF: Dielektrische Festkörper

DF 6: Nanostrukturen, Schichten und Keramiken

DF 6.6: Vortrag

Donnerstag, 11. März 2004, 11:50–12:10, H11

First investigations of MIM capacitors using Pr₂O₃ dielectrics — •Christian Wenger, Gunther Lippert, Hans-Joachim Muessig, Peter Zaumseil, Roland Sorge, and Jaroslaw Dambrowski — IHP Microelectronics GmbH, Im Technologiepark 25, 15236 Frankfurt (Oder)

Metal-insulator-metal(MIM) capacitors with Pr₂O₃ as high-k material have been investigated for the first time. The results show that Pr₂O₃ MIM capacitors can provide higher capacitance densities than Si₃N₄ MIM capacitors while still maintaining comparable voltage coefficients of capacitance. The Pr₂O₃ dielectric material seems to be suitable for use in silicon RF applications.