Regensburg 2004 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 15: Oberfl
ächenmodifizierung
DS 15.2: Vortrag
Mittwoch, 10. März 2004, 16:30–16:45, HS 32
Morphology investigations of ion-eroded SiGe alloy layers — •Christian Hofer1, Stephan Abermann1, Christian Teichert1, Markus Wächter2, Thomas Bobek2, Heinrich Kurz2, Klara Lyutovich3, and Erich Kasper3 — 1Department of Physics, University of Leoben, Austria — 2Institute of Semiconductor Technology, RWTH Aachen, Germany — 3Institute of Semiconductor Engineering, University of Stuttgart, Germany
The possibility to generate well-ordered nanostructures through ion-bombardment of III-V semiconductor surfaces [1] motivated the investigation of normal incidence Ar+-ion bombardment on already self-organized SiGe films [2]. The role of different dislocation densities and starting morphologies on the subsequent pattern formation was investigated by high resolution AFM.
Two different energy regimes were found. For ion-energies of 500 eV and below the surface roughens and craters with a diameter of 70 nm evolve. At higher energies smoothening mechanisms take place. The influence of misfit dislocations on the SiGe pattern formation [3] and the evolution of size and distribution of the nanostructure array depending on ion-energy are discussed in the framework of current theories of ion-bombardment induced pattern formation.
[1] S. Facsko, et al., Science 285, 1551 (1999); F. Frost, et al., Phys. Rev. Lett. 85, 4116 (2000).
[2] C. Teichert et al., Thin Solid Films 380, 28 (2000).
[3] C. Hofer et al., Nucl. Instr. and Meth. B, in print.
This work was partly supported by FWF Austria, P14009-TPH.