Regensburg 2004 – wissenschaftliches Programm
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DS: Dünne Schichten
DS 15: Oberfl
ächenmodifizierung
DS 15.4: Vortrag
Mittwoch, 10. März 2004, 17:00–17:15, HS 32
Plastic deformation of amorphous silicon under swift heavy ion irradiation — •André Hedler1, Siegfried Klaumünzer2, and Werner Wesch1 — 1Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena — 2Hahn-Meitner-Institut Berlin, Glienicker Str. 100, 14109 Berlin
All the investigated amorphous materials show an anisotropic plastic deformation under swift heavy ion irradiation (ion hammering). In the past years this effect has been discussed controversially whereas the viscoelastic theory by Trinkaus et al. represents a good description for glasses. However, a verification of the model for amorphous semiconductors has not been undertaken. With its well-known physical properties Si seems to be a suitable candidate to be investigated first.
Single-crystalline Si wafers were amorphized by low energy Si ion implantation and post-irradiated with MeV Au and Xe ions at 77 K and 300 K. For a constant electronic stopping power a linear increase of the plastic deformation of amorphous Si with increasing ion fluence was observed at both temperatures and was assigned to corresponding deformation yields per ion. Our results show for the first time a dependence of the deformation yield on the electronic stopping power and on the temperature for amorphous Si and therefore provide a basis to verify the theory.