Regensburg 2004 – wissenschaftliches Programm

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DS: Dünne Schichten

DS 2: Ionenimplantation II

DS 2.1: Hauptvortrag

Montag, 8. März 2004, 11:45–12:30, HS 31

Semiconductors under ion bombardment - studied by RBS in situ at 15 K — •Elke Wendler and Werner Wesch — Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, D-07743 Jena

Ion implantation into semiconductors is a well established and important step in device fabrication. The study of the primary processes of the ion-solid interaction is therefore of both technological and scientific interest. The defect concentration within the implanted layers remaining after implantation strongly depends on the target temperature, because the mobility of intrinsic defects may result in strong annealing already during the irradiation. A special target chamber was built up to do ion implantation and ion beam analysis at 15 K without change of the temperature of the sample. This allows us to study the primary ion beam induced effects, whereas thermal effects can be widely excluded. The paper presents results for different III-V semiconductors implanted and measured at 15 K using a wide range of ion species. The effectiveness of damage formation and the mechanisms of amorphisation during the implantation are compared for the various materials investigated. The results are discussed in the framework of models taking into account fundamental physical properties of the semiconductors.