Regensburg 2004 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

DS: Dünne Schichten

DS 7: Spezielle Schichten III

DS 7.2: Vortrag

Montag, 8. März 2004, 11:45–12:00, HS 32

Growth and structure of phthalocyanine thin films on SiO₂ and octadecyltriethoxisilanes — •Dimas Garcia de Oteyza ¹, Esther Barrena¹, J. Oriol Ossó ², and Helmut Dosch^1,3 — ¹Max Planck Institut für Metallforschung, 70569 Stuttgart, Deutschland — ²Institut de Ciència de Materials de Barcelona CSIC, 08190 Bellaterra, Spanien — ³Institut für Theoretische und Angewandte Physik, Universität Stuttgart, 70569 Stuttgart

A key element for the controlled growth of organic thin films is the substrate, since the resulting structure depends on the delicate balance between the substrate-molecule and the intermolecular interaction. The functionalization of the surfaces by self assembling monolayers (SAMs) allows tailoring the surface properties while preserving the morphology. We have used AFM and X-ray diffraction techniques to study the growth and structure of copper hexadecafluorophthalocyanine (F₁₆CuPc) on SiO₂ and on functionalized SiO₂ by octadecyltriethoxisilanes (OTE). OTE is a methyl terminated SAM with a lower surface energy than SiO₂. F₁₆CuPc films grown on SiO₂ are smooth and show good out of plane order with very low mosaicity (0.015^∘).Their (001) plane is oriented parallel to the surface, with the molecules essentially upright. Films grown on OTE show a dewetting structure consisting of big elongated crystallites up to the size of microns. In spite of the morphological differences, the films on OTE exhibit the same out-of-plane lattice parameter and low mosaicity. In-plane X-ray measurements indicate that the domain size is larger for the films on OTE compared to those on SiO₂, in agreement with the AFM images.