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Regensburg 2004 – scientific programme

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DS: Dünne Schichten

DS 9: Dünnschichtanalytik II

DS 9.3: Talk

Monday, March 8, 2004, 15:45–16:00, HS 32

Structure and thickness-dependant lattice parameters of ultra-thin epitaxial Pr2O3 films on Si(001) studied by SR-GIXRD — •Thomas Schroeder1, Tien Lin Lee1, Laure Libralesso1, Jörg Zegenhagen1, Peter Zaumseil2, Christian Wenger2, and Hans Joachim Müssig21E.S.R.F., Beamline ID 32, 6, Rue Jules Horowitz, 38043 Grenoble, France — 2IHP, Im Technologiepark 25, 15236 Frankfurt (Oder)

Heteroepitaxial Pr2O3 films on Si(001) show promising results for applications as high-K dielectrics in future silicon-based microelectronics devices. To solve the epilayer structure and monitor the evolution of the lattice parameters over the technologically important thickness range from 1 to 10 nm, a Synchrotron-grazing incidence X-ray diffraction (SR-GIXRD) study was performed. The oxide film structure is characterized by the growth of the cubic Pr2O3 phase (Ia3) with its rectangular (101) plane on the Si(001) substrate. The resulting two orthogonal rotation domains of the oxide layer are identified by the four-fold symmetry of the oxide reflections. The azimuthal orientation of these oxide domains is determined by measuring the oxide in-plane reflections. These in-plane measurements together with theta - 2theta scans allow to monitor the evolution of the oxide unit cell lattice parameters as a function of film thickness. The transition from almost perfect pseudomorphism to bulk values is detected from 1 to 10 nm film thickness. The intensity analysis of the oxide reflections points to a change in the structure factor of oxide films thinner than 4 nm, probably due to silicate formation at the oxide / Si interface.

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