Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.102: Poster
Montag, 8. März 2004, 16:30–19:00, Poster A
Thermal behaviour of high power 1300nm SLDs — •L. Fu1, H. Schweizer1, L. Li1, A. Baechle2, S. Jochum2, G. Bernatz2, and S. Hansmann2 — 14. Physikalisches Institut, Pfaffenwaldring 57, 70550 Stuttgart — 2Opto Speed Deutschland GmbH, 64295 Darmstadt
Superluminescent (SLDs) are potential light sources useful for many applications including fiber optic-gyroscopes, wavelength-division multiplexing (WDM) systems, and optical coherence tomography. High output power and a short coherence length is desirable for these applications. Due to the fact, that the Fabry-Perot oscillation must be suppressed on the spectra of SLDs, their facet reflectance must be minimized. To get a high output power, SLDs must be operated at very high current density (around 10-20 kA/cm2) and this results in strong Joule heating which affects their output power. The devices are therefore very sensitive to epitaxial structure design, geometrical size and soldering on heat sink. In this contribution we will discuss the optimization of the SLD epitaxial structure for high power application and a possible optimization of the heat dissipation by optimizing the thickness of metal contact, the lateral size, soldering and mounting. We discuss in detail improvements of the vertical SLD structure with respect to photon loss and doping. Using graded-refractive-index separate confinement heterostructure (GRINSCH) and an active region with 8 quantum wells, we obtain an output power of more than 50 mW under pulsed current operation at room temperature for 1A. Under CW operation by p-side up soldering, 8 mW at 400 mA and 20∘ C can be demonstrated.