Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.21: Poster
Montag, 8. März 2004, 16:30–19:00, Poster A
Photomixing at 1.55µ m - Application of the nipnip-THz-emitter concept to long wavelength materials — •Frank H. Renner1, O. Klar1, S. Malzer1, M. Eckardt1, G. Loata2, T. Löffler2, H. Roskos2, D. Driscoll3, M. Hanson3, A.C. Gossard3, and G.H. Döhler1 — 1Insitut für Technische Physik I, Universität Erlangen-Nürnberg , Germany — 2Lehrstuhl für Ultrakurzzeitphysik, Universität Frankfurt a.M., Germany — 3Materials Departement, UC Santa Barbara, U.S.A.
We have recently developed a novel concept for photomixing based on the quasi-ballisitic transport of electrons in a nipnip-superlattice. We were already able to observe THz-radiation from AlGaAs-based samples. For these samples excitation is performed by photomixing around 830 nm (see oral presentation of our group).
Technologically more favourable would be a photomixer operating around 1.55µ m. Several workgroups are currently trying to find a suitable photomixer, operating around this wavelength. In this contribution we extend our nipnip-THz-emitter concept towards 1.55µ m by using the (Al)InGaAs-semiconductor alloy system. Monte Carlo simulations prove this material system to be substantially superior to AlGaAs. We will discuss design and concept of the InGaAs-nipnip-emitter, compare it to the AlGaAs design and report on first results on its realzation.