Regensburg 2004 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 12: Poster I
HL 12.78: Poster
Montag, 8. März 2004, 16:30–19:00, Poster A
Nitrogen doping of ZnO and post-growth rapid thermal annealing — •Nikolay Oleynik1, Armin Dadgar1, Daniel Forster1, Frank Bertram1, Jürgen Bläsing1, Andre Krtschil1, Annette Diez1, Thomas Hempel1, Karsten Fehse1, Jürgen Christen1, Alois Krost1, Markus Seip2, and Arnd Greiling2 — 1Otto-von-Guericke University Magdeburg IEP, FNW, Postfach 4120, 39016 Magdeburg, Germany — 2mochem GmbH, Marburg, Germany
Nitrogen doping is a promising way to achieve p-type doping of ZnO layers. We have systematically investigated MOVPE grown N-doped ZnO layers. For N doping we have used NH3, NO or UDMHy as precursors. ZnO layers were grown using a two step growth procedure on GaN on Sapphire templates starting with a low-temperature buffer layer on which a high-temperature ZnO layer is grown using N2O and DMZn at 750 - 1050∘C. The UDMHy flows were varied from 0-150 sccm, and NO flows were varied from 0-750 sccm. We observe a brownish color of the ZnO layers either at low growth temperature or high UDMHy or NH3 flows. Upon annealing under O2 ambient at 800-900∘C the color is bleached out. No change in color was observed for NO-doped ZnO. We will report on structural, morphological, optical and electrical properties of the films.